The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

Feb. 20, 2012
Applicants:

Elmar Wisotzki, Darmstadt, DE;

Peter Ingram, Hemsbach, DE;

Inventors:

Elmar Wisotzki, Darmstadt, DE;

Peter Ingram, Hemsbach, DE;

Assignee:

IXYS Corporation, Milpitas, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A recess is formed into a first side of a wafer such that a thinned center portion of the wafer is formed, and such that the central portion is surrounded by a thicker peripheral edge support portion. The second side of the wafer remains substantially entirely planar. After formation of the thinned wafer, vertical power devices are formed into the first side of the central portion of the wafer. Formation of the devices involves forming a plurality of diffusion regions into the first side of the thinned central portion. Metal electrodes are formed on the first and second sides, the peripheral portion is cut from the wafer, and the thin central portion is diced to form separate power devices. In one example, a first commercial entity manufactures the thinned wafers, and a second commercial entity obtains the thinned wafers and performs subsequent processing to form the vertical power devices.


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