The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Apr. 17, 2009
Issei Satoh, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Issei Satoh, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
There are provided a SiCAlNsubstrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof. A method for manufacturing a SiCAlNsubstrate according to the present invention includes the steps of preparing a different type of substrateand growing a SiCAlNlayer having a main surface on the different type of substrate. The component ratio x+v at the main surface of the SiCAlNlayer is 0<x+v<1. The component ratio x+v increases or decreases monotonically from the interface between the SiCAlNlayer and the different type of substrateto the main surface of the SiCAlNlayer. The component ratio x+v at the interface between the SiCAlNlayer and the different type of substrateis closer to that of the material of the different type of substratethan the component ratio x+v at the main surface of the SiCAlNlayer.