The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Feb. 23, 2011
Betty Y. Lau, Fremont, CA (US);
Edgardo F. Klass, Palo Alto, CA (US);
Anup S. Mehta, Fremont, CA (US);
Betty Y. Lau, Fremont, CA (US);
Edgardo F. Klass, Palo Alto, CA (US);
Anup S. Mehta, Fremont, CA (US);
Apple Inc., Cupertino, CA (US);
Abstract
In one embodiment, an IR drop analysis methodology may include characterizing standard cells without including power parasitic impedances, extracting the power parasitic impedances for the standard cells, and characterizing the standard cells with the power parasitic impedances. A set of timing parameters (such as minimum delays and maximum delays through the cells) may be generated from each characterization. The methodology may include comparing the timing parameters from each characterization, and identifying cells for which additional design effort should be expended to improve the power supply grid (e.g. to reduce the power parasitic impedances). For example, a margin may be budgeted for speed loss (delay increase) due to IR drop. If the difference in the timing parameters exceeds the margin, additional design effort may be warranted.