The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jul. 18, 2012
Hans-joachim Schulze, Taufkirchen, DE;
Johannes Laven, Taufkirchen, DE;
Dieter Fuchs, Munich, DE;
Werner Schustereder, Villach, AT;
Roman Knoefler, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Johannes Laven, Taufkirchen, DE;
Dieter Fuchs, Munich, DE;
Werner Schustereder, Villach, AT;
Roman Knoefler, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types. The first and second columns extend along a main crystal direction along which channeling of implanted ions occurs from a first surface into the epitaxial layer. A vertical dopant profile of one of the first and second columns includes first portions separated by second portions. In the first portions a dopant concentration varies by at most 30%. In the second portions the dopant concentration is lower than in the first portions. The ratio of a total length of the first portions to the total length of the first and second portions is at least 50%. The uniform dopant profiles improve device characteristics.