The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Aug. 08, 2007
Yuan-chih Hsieh, Hsinchu, TW;
Shih-chang Liu, Kaohsiung County, TW;
Shih-chi Fu, Taipei, TW;
Tzu-hsuan Hsu, Kaohsiung, TW;
Chung-yi Yu, Hsin-Chu, TW;
Gwo-yuh Shiau, Hsinchu, TW;
Chia-shiung Tsai, Kaohsiung, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Shih-Chang Liu, Kaohsiung County, TW;
Shih-Chi Fu, Taipei, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Gwo-Yuh Shiau, Hsinchu, TW;
Chia-Shiung Tsai, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.