The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jun. 18, 2007
Qingchun Zhang, Cary, NC (US);
Sei-hyung Ryu, Farmington Hills, MI (US);
Charlotte Jonas, Morrisville, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
Qingchun Zhang, Cary, NC (US);
Sei-Hyung Ryu, Farmington Hills, MI (US);
Charlotte Jonas, Morrisville, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
An insulated gate bipolar transistor (IGBT) includes a substrate having a first conductivity type, a drift layer having a second conductivity type opposite the first conductivity type, and a well region in the drift layer and having the first conductivity type. An epitaxial channel adjustment layer is on the drift layer and has the second conductivity type. An emitter region extends from a surface of the epitaxial channel adjustment layer through the epitaxial channel adjustment layer and into the well region. The emitter region has the second conductivity type and at least partially defines a channel region in the well region adjacent to the emitter region. A gate oxide layer is on the channel region, and a gate is on the gate oxide layer. Related methods are also disclosed.