The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Feb. 01, 2012
Meng-feng Tsai, New Taipei, TW;
Yi-shiang Chang, Changhua County, TW;
Chia-chi Lin, Hsinchu County, TW;
I-hsin Chen, Taoyuan County, TW;
Chia-ming Wu, Taipei, TW;
Meng-Feng Tsai, New Taipei, TW;
Yi-Shiang Chang, Changhua County, TW;
Chia-Chi Lin, Hsinchu County, TW;
I-Hsin Chen, Taoyuan County, TW;
Chia-Ming Wu, Taipei, TW;
Powerchip Technology Corporation, Hsinchu, TW;
Abstract
A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.