The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jan. 06, 2012
Ching-sung Yang, Hsinchu, TW;
Wen-hao Ching, Hsinchu, TW;
Wei-ming Ku, New Taipei, TW;
Yung-hsiang Chen, Hsinchu, TW;
Shih-chen Wang, Taipei, TW;
Hsin-ming Chen, Hsinchu, TW;
Ching-Sung Yang, Hsinchu, TW;
Wen-Hao Ching, Hsinchu, TW;
Wei-Ming Ku, New Taipei, TW;
Yung-Hsiang Chen, Hsinchu, TW;
Shih-Chen Wang, Taipei, TW;
Hsin-Ming Chen, Hsinchu, TW;
eMemory Technology Inc., Hsinchu, TW;
Abstract
A flash memory apparatus is provided. The flash memory apparatus includes a plurality of memory cells and a plurality of programming voltage control generators. Each of the memory cells receives a programming control voltage through a control end thereof, and executes data programming operation according to the programming control voltages. Each of the programming voltage control generators includes a pre-charge voltage transmitter and a pumping capacitor. The pre-charge voltage transmitter provides pre-charge voltage to the end of each of the corresponding memory cells according to pre-charge enable signal during a first period. A pumping voltage is provided to the pumping capacitor during a second period, and the programming control voltage is generated at the control end of each of the memory cells.