The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
May. 15, 2007
Mitsuo Sugino, Tokyo, JP;
Satoru Katsurayama, Tokyo, JP;
Hiroyuki Yamashita, Tokyo, JP;
Sumitomo Bakelite Co., Ltd., Tokyo, JP;
Abstract
A semiconductor deviceis equipped with a first substrateon which a first semiconductor chipis mounted, a second substrateon which a second semiconductor chipis mounted, and connecting sectionsthat electrically connect the first substrateand the second substrate. The first substratehas build-up layersA andB in each of which an insulating layercontaining a resin and conductor interconnect layersandare laminated alternately, and the respective conductor interconnect layersare connected by a conductive layerprovided in via holes of the insulating layers. The second substratealso has build-up layersA andB. In the insulating layersof the build-up layers in at least one substrate of the first substrateand the second substrate, the average coefficient of thermal expansion of at least one insulating layer along the substrate inplane direction at from 25 degrees centigrade to the glass transition point is 35 ppm/degrees centigrade or less, and the average coefficient of thermal expansion along the substrate thickness direction is 35 ppm/degrees centigrade or less.