The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jan. 28, 2011
Applicants:
Liu Yang, Yorba Linda, CA (US);
Manchao Xiao, San Diego, CA (US);
Bing Han, Lansdale, PA (US);
Kirk S. Cuthill, Vista, CA (US);
Mark L. O'neill, San Marcos, CA (US);
Inventors:
Liu Yang, Yorba Linda, CA (US);
Manchao Xiao, San Diego, CA (US);
Bing Han, Lansdale, PA (US);
Kirk S. Cuthill, Vista, CA (US);
Mark L. O'Neill, San Marcos, CA (US);
Assignee:
Air Products and Chemicals, Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.