The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Mar. 04, 2010
Liu Yang, Yorba Linda, CA (US);
Manchao Xiao, San Diego, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Mark Leonard O'neill, San Marcos, CA (US);
Liu Yang, Yorba Linda, CA (US);
Manchao Xiao, San Diego, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Mark Leonard O'Neill, San Marcos, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.