The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Mar. 21, 2011
Myung-sun Kim, Hwaseong-si, KR;
Dong-suk Shin, Yongin-si, KR;
Dong-hyuk Kim, Seongnam-si, KR;
Yong-joo Lee, Hwaseong-si, KR;
Hoi-sung Chung, Hwaseong-si, KR;
Myung-Sun Kim, Hwaseong-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Dong-Hyuk Kim, Seongnam-si, KR;
Yong-Joo Lee, Hwaseong-si, KR;
Hoi-Sung Chung, Hwaseong-si, KR;
Abstract
Provided are methods of forming semiconductor devices. A method may include preparing a semiconductor substrate including a first region and a second region adjacent the first region. The method may also include forming sacrificial pattern covering the second region and exposing the first region. The method may further include forming a capping layer including a faceted sidewall on the first region using selective epitaxial growth (SEG). The faceted sidewall may be separate from the sacrificial pattern. The sacrificial pattern may be removed. Impurity ions may be implanted into the semiconductor substrate.