The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jul. 18, 2013
SK Hynix Inc., Icheon-si, KR;
Kyoung Bong Rouh, Icheon-Si, KR;
Young Hwan Joo, Cheongju, KR;
SK hynix Inc., Icheon-Si, KR;
Abstract
A transistor for preventing or reducing short channel effect includes a substrate; a gate stack disposed over the substrate; a first junction region disposed on the substrate at a first side surface of the gate stack, said first junction layer being formed of an epitaxial layer; a trench formed within the substrate at a second side surface of the gate stack; and a second junction region disposed below the trench, said second junction layer being lower than the first junction region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile