The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Apr. 23, 2008
Applicants:

Kafil M. Razeeb, Shanakiel, IE;

Saibal Roy, Carrigaline, IE;

James Francis Rohan, Frankfield, IE;

Lorraine Christine Nagle, Mallow, IE;

Inventors:

Kafil M. Razeeb, Shanakiel, IE;

Saibal Roy, Carrigaline, IE;

James Francis Rohan, Frankfield, IE;

Lorraine Christine Nagle, Mallow, IE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/373 (2006.01); B32B 3/24 (2006.01); C25D 5/02 (2006.01); C25D 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thermal interface material () comprises a bulk polymer () within which is embedded sub-micron (c. 200 to 220 nm) composite material wires () having Ag and carbon nanotubes ('CNTs'). The CNTs are embedded in the axial direction and have diameters in the range of 9.5 to 10 nm and have a length of about 0.7 μm. In general the pore diameter can be in the range of 40 to 1200 nm. The material () has particularly good thermal conductivity because the wires () give excellent directionality to the nanotubes ()—providing very low resistance heat transfer paths. The TIM is best suited for use between semiconductor devices (e.g. power semiconductor chip) and any type of thermal management systems for efficient removal of heat from the device.


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