The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Apr. 26, 2012
Izumi Hirano, Fujisawa, JP;
Shosuke Fujii, Yokohama, JP;
Yuichiro Mitani, Kanagawa-ken, JP;
Naoki Yasuda, Yokohama, JP;
Izumi Hirano, Fujisawa, JP;
Shosuke Fujii, Yokohama, JP;
Yuichiro Mitani, Kanagawa-ken, JP;
Naoki Yasuda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of AlO, HfO, ZrO, TiO, and MgO, the material is stoichiometric composition, and the charge trapping film includes material different from the material of the metal oxide.