The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2014

Filed:

Dec. 21, 2011
Applicants:

Christopher Vineis, Watertown, MA (US);

James Carey, Waltham, MA (US);

Xia LI, Beverly, MA (US);

Inventors:

Christopher Vineis, Watertown, MA (US);

James Carey, Waltham, MA (US);

Xia Li, Beverly, MA (US);

Assignee:

SiOnyx, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01);
U.S. Cl.
CPC ...
Abstract

Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.


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