Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same

Abstract

A metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate, a patterned first dielectric layer including a first dielectric portion over the diffused region, a patterned first conductive layer on the patterned first dielectric layer, the patterned first conductive layer including a first conductive portion on the first dielectric portion, a patterned second dielectric layer including a second dielectric portion that extends on a first portion of an upper surface of the first conductive portion and along a sidewall of the first conductive portion to the substrate; and a patterned second conductive layer on the patterned second dielectric layer, the patterned second conductive layer including a second conductive portion on the second dielectric portion.