The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Nov. 24, 2011
Applicants:
Shih-guei Yan, Hsinchu, TW;
Wen-jer Tsai, Hsinchu, TW;
Cheng-hsien Cheng, Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device is described, including a tunnel dielectric layer over a substrate, a gate over the tunnel dielectric layer, at least one charge storage layer between the gate and the tunnel dielectric layer, two doped regions in the substrate beside the gate, and a word line that is disposed on and electrically connected to the gate and has a thickness greater than that of the gate.