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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8698199 B1

PDFFull Text
Date of Patent:
Apr. 15, 2014

Filed:

Jan. 11, 2012

Finfet structure

Applicants:

Tong-yu Chen, Hsinchu, TW;

Chih-jung Wang, Hsinchu, TW;

Inventors:

Tong-Yu Chen, Hsinchu, TW;

Chih-Jung Wang, Hsinchu, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Zandra Smith

Assistant Examiner:

Paul Patton

Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.

Find Patent Forward Citations

Chen, Tong-Yu. (2014). Finfet structure (U.S. Patent No. 8698199). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8698199

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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