The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Sep. 07, 2011
Woongkwon Kim, Cheonan-si, KR;
Daecheol Kim, Hwaseong-si, KR;
Ki-hun Jeong, Cheonan-si, KR;
Sunghoon Yang, Seoul, KR;
Yunjong Yeo, Seoul, KR;
Sang Youn Han, Seoul, KR;
Sungryul Kim, Asan-si, KR;
Suk Won Jung, Goyang-si, KR;
Byeonghoon Cho, Seoul, KR;
Heejoon Kim, Asan-si, KR;
Hong-kee Chin, Suwon-si, KR;
Kyung-sook Jeon, Yongin-si, KR;
Seungmi Seo, Seoul, KR;
Kyung-ho Park, Cheonan-si, KR;
Jung Suk Bang, Guri-si, KR;
Kun-wook Han, Seongnam-si, KR;
Mi-seon Seo, Seoul, KR;
Woongkwon Kim, Cheonan-si, KR;
Daecheol Kim, Hwaseong-si, KR;
Ki-Hun Jeong, Cheonan-si, KR;
SungHoon Yang, Seoul, KR;
Yunjong Yeo, Seoul, KR;
Sang Youn Han, Seoul, KR;
Sungryul Kim, Asan-si, KR;
Suk Won Jung, Goyang-si, KR;
Byeonghoon Cho, Seoul, KR;
HeeJoon Kim, Asan-si, KR;
Hong-Kee Chin, Suwon-si, KR;
Kyung-Sook Jeon, Yongin-si, KR;
Seungmi Seo, Seoul, KR;
Kyung-ho Park, Cheonan-si, KR;
Jung suk Bang, Guri-si, KR;
Kun-Wook Han, Seongnam-si, KR;
Mi-Seon Seo, Seoul, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.