The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2014

Filed:

Mar. 25, 2010
Applicants:

Kyung-sook Jeon, Yongin-si, KR;

Kap-soo Yoon, Seoul, KR;

Woong-kwon Kim, Cheonan-si, KR;

Sang-youn Han, Cheonan-si, KR;

Jun-ho Song, Seongnam-si, KR;

Sung-hoon Yang, Seoul, KR;

Byeong-hoon Cho, Seoul, KR;

Dae-cheol Kim, Suwon-si, KR;

Ki-hun Jeong, Cheongan-si, KR;

Jung-suk Bang, Guri-si, KR;

Inventors:

Kyung-Sook Jeon, Yongin-si, KR;

Kap-Soo Yoon, Seoul, KR;

Woong-Kwon Kim, Cheonan-si, KR;

Sang-Youn Han, Cheonan-si, KR;

Jun-Ho Song, Seongnam-si, KR;

Sung-Hoon Yang, Seoul, KR;

Byeong-Hoon Cho, Seoul, KR;

Dae-Cheol Kim, Suwon-si, KR;

Ki-Hun Jeong, Cheongan-si, KR;

Jung-Suk Bang, Guri-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.


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