The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2014

Filed:

Oct. 31, 2011
Applicants:

Takayuki Nakamura, Tokyo, JP;

Tsutomu Murakawa, Tokyo, JP;

Inventors:

Takayuki Nakamura, Tokyo, JP;

Tsutomu Murakawa, Tokyo, JP;

Assignee:

Advantest Corp., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01);
Abstract

The pattern inspection apparatus includes: an irradiator irradiating a sample with an electron beam; an electron detector detecting an amount of electrons generated on the sample having a pattern formed thereon, by the irradiation of the electron beam; an image processor generating a SEM image of the pattern on the basis of the electron amount; and a controller acquiring defect position information on the pattern formed on the sample from an optical defect inspection device. The controller specifies a defect candidate pattern from the SEM image on the basis of the defect position information and judges whether a defect in the defect candidate pattern is to be transferred onto a wafer. The controller determines a view field of the SEM image on the basis of the defect position information and specifies the defect candidate pattern from image information on patterns displayed in the view field.


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