The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Sep. 05, 2006
Shunpei Yamazaki, Tokyo, JP;
Hisashi Ohtani, Tochigi, JP;
Masaaki Hiroki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Aiko Shiga, Kanagawa, JP;
Satoshi Murakami, Tochigi, JP;
Mai Akiba, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hisashi Ohtani, Tochigi, JP;
Masaaki Hiroki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Aiko Shiga, Kanagawa, JP;
Satoshi Murakami, Tochigi, JP;
Mai Akiba, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.