Method of stressing static random access memories for pass transistor defects

Abstract

A method of stressing and screening static random access memory (SRAM) arrays to identify memory cells with bit line side pass transistor defects. After writing initial data states into the memory array under nominal bias conditions, an elevated bias voltage is applied to the memory array, for example to its power supply node. Under the elevated bias voltage, alternating data patterns are written into and read from the memory array for a selected duration. The elevated bias voltage is reduced, and a write screen is performed to identify defective memory cells. The dynamic stress of the repeated writes and reads accelerates early life failures, facilitating the write screen.