The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Feb. 17, 2012
Applicants:

Leelean Shu, Los Altos, CA (US);

Chenming W. Tung, Fremont, CA (US);

Hsin You S. Lee, Campbell, CA (US);

Inventors:

LeeLean Shu, Los Altos, CA (US);

Chenming W. Tung, Fremont, CA (US);

Hsin You S. Lee, Campbell, CA (US);

Assignee:

GSI Technology, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/18 (2006.01); G11C 7/06 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/18 (2013.01); G11C 7/06 (2013.01); G11C 5/06 (2013.01);
Abstract

A hierarchical sectioned bit line of an SRAM memory device, an SRAM memory device having a sectioned bit line in hierarchy, and associated systems and methods are described. In one illustrative implementation, each sectioned bit line may comprise a local bit line, a memory cell connected to the local bit line, and a pass gate coupled to the local bit line, wherein the pass gate is configured to be coupled to a global bit line, and wherein the sectioned bit lines are arranged in hierarchical arrays. In other implementations, a hierarchical SRAM memory device may be configured involving sectioned bit lines and a global bit line wherein the pass gates are configured to connect and isolate the sectioned bit line and the global bit line.


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