The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Jan. 08, 2009
Applicants:

Michael Chaine, Boise, ID (US);

Xiaofeng Fan, Boise, ID (US);

Inventors:

Michael Chaine, Boise, ID (US);

Xiaofeng Fan, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Integrated circuits, memories, protection circuits and methods for protecting against an over-limit electrical condition at a node of an integrated circuit. One such protection circuit includes a snapback circuit having at least a portion formed in an isolated doped well region and configured to switch to a low impedance state in response to an input exceeding a trigger condition and further having a control circuit electrically coupled to a reference voltage and further electrically coupled to the isolated doped well region and the portion of the snapback circuit formed in the doped well region. The control circuit includes an impedance adjustable in response to a control signal and configured to adjust an isolated doped well impedance in which at least a portion of the snapback circuit is formed relative to the reference voltage. A modulated trigger and hold condition for the snapback circuit can be set according to a control signal adjusting an electrical impedance of the control circuit.


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