The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

Nov. 01, 2011
Applicants:

Brett Busch, Boise, ID (US);

Kevin R. Shea, Boise, ID (US);

Thomas A. Figura, Boise, ID (US);

Inventors:

Brett Busch, Boise, ID (US);

Kevin R. Shea, Boise, ID (US);

Thomas A. Figura, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor device structures include an at least partially formed container capacitor having a generally cylindrical first conductive member with at least one inner sidewall surface, a lattice material at least partially laterally surrounding an upper end portion of the first conductive member, an anchor material, and at least one aperture extending through the lattice material between the at least partially formed container capacitor and an adjacent at least partially formed container capacitor. Other structures include an at least partially formed container capacitor, a lattice material, and an anchor material disposed over a surface of the lattice material and at least a portion of an end surface of the first conductive member and forming a chemical barrier over at least a portion of an interface between the lattice material and the upper end portion of the first conductive member.


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