The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

May. 24, 2012
Applicants:

Chiyan Kuan, Danville, CA (US);

Wei Fang, Milpitas, CA (US);

You-jin Wang, Milpitas, CA (US);

Inventors:

Chiyan Kuan, Danville, CA (US);

Wei Fang, Milpitas, CA (US);

You-Jin Wang, Milpitas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/225 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
G01N 23/2251 (2013.01); H01J 37/28 (2013.01); H01J 2237/2817 (2013.01);
Abstract

A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.


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