The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 24, 2011
Yukinao Kaga, Toyama, JP;
Tatsuyuki Saito, Toyama, JP;
Masanori Sakai, Toyama, JP;
Takashi Yokogawa, Toyoma, JP;
Yukinao Kaga, Toyama, JP;
Tatsuyuki Saito, Toyama, JP;
Masanori Sakai, Toyama, JP;
Takashi Yokogawa, Toyoma, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.