The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Apr. 19, 2011
Applicants:
Shigeo Satoh, Yokohama, JP;
Kaina Suzuki, Yokohama, JP;
Inventors:
Shigeo Satoh, Yokohama, JP;
Kaina Suzuki, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A first insulating film is formed above a semiconductor substrate with a device isolation insulating film defining a device region, a gate electrode and source/drain region formed. The first insulating film is etched, leaving the first insulating film in a recess formed in an edge of the device isolation insulating film. A second insulating film applying a stress to the semiconductor substrate is formed after etching the first insulating film.