The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Dec. 07, 2012
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Toshiya Yokogawa, Nara, JP;
Mitsuaki Oya, Osaka, JP;
Atsushi Yamada, Osaka, JP;
Ryou Kato, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride-based semiconductor light-emitting deviceincludes a GaN substrate, of which the principal surface is an m-plane, a semiconductor multilayer structurethat has been formed on the m-planeof the GaN-based substrate, and an electrodearranged on the semiconductor multilayer structure. The electrodeincludes an Mg layer, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure
Quick Actions:
Yokogawa, Toshiya. (2014). Nitride-based semiconductor device and method for fabricating the same (U.S. Patent No. 8686561). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8686561
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile