The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Aug. 28, 2012
Katsuhiko Hotta, Tokyo, JP;
Kyoko Sasahara, Tokyo, JP;
Taichi Hayamizu, Tokyo, JP;
Yuichi Kawano, Tokyo, JP;
Katsuhiko Hotta, Tokyo, JP;
Kyoko Sasahara, Tokyo, JP;
Taichi Hayamizu, Tokyo, JP;
Yuichi Kawano, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.