The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Feb. 09, 2012
Applicants:

Chien-chih Chen, Hsinchu County, TW;

Li-fan Chen, Hsinchu, TW;

Cheng-chi Lin, Toucheng Township, Yilan County, TW;

Shin-chin Lien, New Taipei, TW;

Shyi-yuan Wu, Hsinchu, TW;

Inventors:

Chien-Chih Chen, Hsinchu County, TW;

Li-Fan Chen, Hsinchu, TW;

Cheng-Chi Lin, Toucheng Township, Yilan County, TW;

Shin-Chin Lien, New Taipei, TW;

Shyi-Yuan Wu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a first doped region and a second doped region. The first doped region comprises a first contact region. The first doped region and the first contact region have a first type conductivity. The second doped region comprises a second contact region. The second doped region and the second contact region have a second type conductivity opposite to the first type conductivity. The first doped region is adjacent to the second doped region.


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