The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
May. 21, 2012
Tsung-yi Huang, Hsinchu, TW;
Ching-yao Yang, Changhua, TW;
Tsung-Yi Huang, Hsinchu, TW;
Ching-Yao Yang, Changhua, TW;
Richtek Technology Corporation, Chupei, Hsin-Chu, TW;
Abstract
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device is formed in a first conductive type substrate, and includes a second conductive type high voltage well, a field oxide region, a gate, a second conductive type source, a second conductive type drain, a first conductive type body region, and a first conductive type deep well. The deep well is formed beneath and adjacent to the high voltage well in a vertical direction. The deep well and the high voltage well are defined by a same lithography process step.