The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jun. 24, 2010
Sadayoshi Horii, Toyoma, JP;
Atsushi Sano, Toyama, JP;
Masahito Kitamura, Toyama, JP;
Yoshitake Kato, Sagamihara, JP;
Sadayoshi Horii, Toyoma, JP;
Atsushi Sano, Toyama, JP;
Masahito Kitamura, Toyama, JP;
Yoshitake Kato, Sagamihara, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Renesas Electronics Corp., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.