The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 28, 2011
Applicants:
Tsung-chieh Tsai, Chu-Bei, TW;
Yung-che Albert Shih, Hsinchu, TW;
Jhy-kang Ting, Baoshan Township, TW;
Inventors:
Tsung-Chieh Tsai, Chu-Bei, TW;
Yung-Che Albert Shih, Hsinchu, TW;
Jhy-Kang Ting, Baoshan Township, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. In at least one embodiment, a non-conductive material is used for forming the dummy gate feature to replace a sacrificial gate electrode.