The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jun. 12, 2007
Chen-fu Chu, Hsinchu, TW;
Wen-huang Liu, Guan-Xi Town, TW;
Jiunn-yi Chu, Chubei, TW;
Chao-chen Cheng, Hsinchu, TW;
Hao-chun Cheng, Donggang Township, Pingtung County, TW;
Feng-hsu Fan, Jhonghe, TW;
Trung Tri Doan, Baoshan Township, TW;
Chen-Fu Chu, Hsinchu, TW;
Wen-Huang Liu, Guan-Xi Town, TW;
Jiunn-Yi Chu, Chubei, TW;
Chao-Chen Cheng, Hsinchu, TW;
Hao-Chun Cheng, Donggang Township, Pingtung County, TW;
Feng-Hsu Fan, Jhonghe, TW;
Trung Tri Doan, Baoshan Township, TW;
SemiLEDs Optoelectronics Co., Ltd., Miao-Li County, TW;
Abstract
Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.