The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
May. 22, 2012
Adam Bauer, Veitshoechheim, DE;
Sven Hoefling, Zellingen, DE;
Lukas Worschech, Wuerzburg, DE;
Julius-Maximillians-Universität-Würzburg, Würzburg, DE;
Abstract
An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film () comprising a first semiconductor material and an electron quantum film () comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film () comprising a third semiconductor material and separated by a first barrier layer (), and an electron injector region (I) following the latter and comprising at least one injector quantum film () comprising a fourth semiconductor material and separated by a second barrier layer (). The first semiconductor material of the hole quantum film () is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 μm.