The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Aug. 21, 2012
Meng-yi Wu, Kaohsiung, TW;
Yueh-chia Wen, Taoyuan County, TW;
Hsin-ming Chen, Hsinchu, TW;
Ching-sung Yang, Hsinchu, TW;
Meng-Yi Wu, Kaohsiung, TW;
Yueh-Chia Wen, Taoyuan County, TW;
Hsin-Ming Chen, Hsinchu, TW;
Ching-Sung Yang, Hsinchu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A one-bit memory cell for a nonvolatile memory includes a bit line and a plurality of serially-connected storage units. The bit line is connected to the serially-connected storage units. Each storage unit includes a first doped region, a second doped region and a third doped region, which are formed in a surface of a substrate. A first gate structure is disposed over a first channel region between the first doped region and the second doped region. The first gate structure is connected to a control signal line. A second gate structure is disposed over a second channel region between the second doped region and the third doped region. The second gate structure is connected to an anti-fuse signal line.