The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Dec. 02, 2011
Tadaomi Daibou, Yokohama, JP;
Junichi Ito, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Minoru Amano, Sagamihara, JP;
Hiroaki Yoda, Sagamihara, JP;
Terunobu Miyazaki, Sendai, JP;
Shigemi Mizukami, Sendai, JP;
Koji Ando, Tsukuba, JP;
Kay Yakushiji, Tsukuba, JP;
Shinji Yuasa, Tsukuba, JP;
Hitoshi Kubota, Tsukuba, JP;
Akio Fukushima, Tsukuba, JP;
Taro Nagahama, Tsukuba, JP;
Takahide Kubota, Sendai, JP;
Tadaomi Daibou, Yokohama, JP;
Junichi Ito, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Minoru Amano, Sagamihara, JP;
Hiroaki Yoda, Sagamihara, JP;
Terunobu Miyazaki, Sendai, JP;
Shigemi Mizukami, Sendai, JP;
Koji Ando, Tsukuba, JP;
Kay Yakushiji, Tsukuba, JP;
Shinji Yuasa, Tsukuba, JP;
Hitoshi Kubota, Tsukuba, JP;
Akio Fukushima, Tsukuba, JP;
Taro Nagahama, Tsukuba, JP;
Takahide Kubota, Sendai, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
WPI-AIMR, Tohoku University, Sendai-shi, JP;
Abstract
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnGa(45≦x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnGa(45≦y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.