The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8680596 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 25, 2014

Filed:

Dec. 03, 2012
Applicant:

Fujitsu Semiconductor Limited, Yokohama, JP;

Inventors:

Hideaki Kikuchi, Kawasaki, JP;

Kouichi Nagai, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.


Find Patent Forward Citations

Kikuchi, Hideaki. (2014). Semiconductor device and method for manufacturing the same (U.S. Patent No. 8680596). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8680596

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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