The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Sep. 28, 2012
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Christophe Martinez, Grenoble, FR;
Pascal Boulitreau, Sassenage, FR;
Fabien Laulagnet, Fontaine, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/04 (2006.01);
U.S. Cl.
CPC ...
G21K 5/04 (2013.01);
Abstract
An installation and method for etching at least one wafer coated with an etch-ready, blank photosensitive layer is disclosed. In accordance with an embodiment, the wafer has thickness irregularities, wherein the wafer is arranged to be able to be submitted to irradiation-beam scanning, a sheet transparent to the radiation to which the photosensitive layer is sensitive covers the wafer, and a probe beam intended to reflect on the upper portion of the sheet perpendicularly to the irradiation beam spot on the photosensitive layer is provided.