The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Oct. 11, 2007
Applicants:
Shinichi Akiyama, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Masanori Uchida, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.