The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Feb. 10, 2010
Shin Hashimoto, Itami, JP;
Katsushi Akita, Itami, JP;
Kensaku Motoki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Shin Hashimoto, Itami, JP;
Katsushi Akita, Itami, JP;
Kensaku Motoki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
KOHA Co., Ltd., Tokyo, JP;
Abstract
A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S, an AlN buffer layeris grown. In step S, at a time t, a source gas Gcontaining hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactorto grow the AlN buffer layeron a primary surface. The AlN buffer layeris so called a low-temperature buffer layer. After a start of film formation of the buffer layer, in step Ssupply of hydrogen (H) is started at a time t. At the time t, H, N, TMA, and NHare supplied into the growth reactor. A supply amount of hydrogen is increased between times tand t, and at the time tthe increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t, H, TMA, and NHare supplied into the growth reactor