The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Jan. 31, 2012
Sung-taeg Kang, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Jane A. Yater, Austin, TX (US);
Sung-Taeg Kang, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Jane A. Yater, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a semiconductor device includes forming a first plurality of nanocrystals over a surface of a substrate having a first region and a second region, wherein the first plurality of nanocrystals is formed in the first region and the second region and has a first density; and, after forming the first plurality of nanocrystals, forming a second plurality of nanocrystals over the surface of the substrate in the second region and not the first region, wherein the first plurality of nanocrystals together with the second plurality of nanocrystals in the second region result in a second density, wherein the second density is greater than the first density.