The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

May. 07, 2012
Applicants:

Yan Wang, San Jose, CA (US);

Yuansheng MA, Santa Clara, CA (US);

Jongwook Kye, Pleasanton, CA (US);

Mahbub Rashed, Santa Clara, CA (US);

Inventors:

Yan Wang, San Jose, CA (US);

Yuansheng Ma, Santa Clara, CA (US);

Jongwook Kye, Pleasanton, CA (US);

Mahbub Rashed, Santa Clara, CA (US);

Assignee:

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.


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