The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Nov. 21, 2012
National Applied Research Laboratories, Taipei, TW;
Chien-Chao Huang, Hsinchu, TW;
Chun-Chi Chen, Hsinchu, TW;
Shyi-Long Shy, Hsinchu, TW;
Cheng-San Wu, Hsinchu, TW;
Fu-Liang Yang, Hsinchu, TW;
National Applied Research Laboratories, Taipei, TW;
Abstract
A method for fabricating a patterned layer is disclosed. Firstly, a semiconductor substrate is provided. Then, a precursory gas on the semiconductor substrate is formed. Finally, a patterned layer on the semiconductor substrate is deposited by reacting the precursory gas with at least one electron beam or at least one ion beam. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.