The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
May. 09, 2011
Chun-kai Liu, Taipei, TW;
John H. Lau, Taipei, TW;
Ming-ji Dai, Hsinchu, TW;
Ra-min Tain, New Taipei, TW;
Chun-Kai Liu, Taipei, TW;
John H. Lau, Taipei, TW;
Ming-Ji Dai, Hsinchu, TW;
Ra-Min Tain, New Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.