The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Jun. 14, 2012
Applicants:

Hiroshi Shimizu, Tokyo, JP;

Takamitsu Onda, Tokyo, JP;

Inventors:

Hiroshi Shimizu, Tokyo, JP;

Takamitsu Onda, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is disclosed, which comprises first and second input ports, first and second output nodes, and first and second transistors. The first transistor includes first and second diffusion regions defining a first channel region and a first gate electrode and connected to the first input port, the first diffusion region being connected to the first output node, the second diffusion region being disposed between the first diffusion region and the first input port and supplied with a first operating potential. The second transistor includes third and fourth diffusion regions defining a second channel region and a second gate electrode and connected to the second input port, the third diffusion region being supplied with the first operating potential, the fourth diffusion region being disposed between the third diffusion region and the second input port and connected to the second output node.


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