The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jun. 16, 2011
Cheng-yu MA, Tainan, TW;
Wen-han Hung, Kaohsiung, TW;
Cheng-Yu Ma, Tainan, TW;
Wen-Han Hung, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal gate includes the following steps. First, a substrate having an interfacial dielectric layer above the substrate is provided. Then, a gate trench having a barrier layer is formed in the interfacial dielectric layer. A source layer is disposed above the barrier layer. Next, a process is performed to have at least one element in the source layer move into the barrier layer. Finally, the source layer is removed and a metal layer fills up the gate trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile